Tungsten oxide films by radio-frequency magnetron sputtering for near-infrared photonics

نویسندگان

چکیده

Tungsten oxide WO 3- x is a transition metal and wide bandgap semiconductor, with range of possible optical photonic applications. In dependence on the fabrication techniques different stoichiometric ratios ( ) crystalline phases are obtained, which end up an overall polymorph extremely versatile material, characterized by tailorable dielectric properties. particular, thin film deposition Radio-Frequency (RF) sputtering provides precise control thickness, composition nanostructure. this work we introduce discuss specific process deposition, that magnetron RF-sputtering as suitable way to grow films selected Possibility integrating one-dimensional (1D) crystal structures also explored. Films transparent in near short-wavelength infrared spectral range. Their quality assessed morphological, structural compositional characterizations. Dielectric properties spectroscopy ellipsometry, latter evaluates degree anisotropy their phase. An 1D photonics structure designed, formed SiO 2 –TiO multilayer capped 450 nm-thick film, so surface confinement local enhancement field at 1416 nm topmost layer obtained. • compact smooth good quality. air-annealing NIR. Evaluation accuracy determining Tauc plot analysis. Optical evaluated. NIR .

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ژورنال

عنوان ژورنال: Optical Materials: X

سال: 2021

ISSN: ['2590-1478']

DOI: https://doi.org/10.1016/j.omx.2021.100093